Simulation of piezoelectric and spontaneous polarization effect on the InGaN/Si tandem solar cell
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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3. Basic equations for the modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT), NASA/TM–211983;Freeman,2003
4. Theory of polarization of crystalline solids;King-Smith;Phys. Rev. B,1993
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