Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node-Reference-Cited by-同舟云学术

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Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node

Published:2009-03 Issue:7 Volume:120 Page:325-329
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Yuan Qiongyan,Wang Xiangzhao,Qiu Zicheng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Resolution enhancement technology: the past, the present, and extensions for the future;Schellenberg;Proc. SPIE,2004

2. Lithographic performance of a dual stage, 0.93NA ArF step & scan system;Rubingh;Proc. SPIE,2005

3. Progressive ArF exposure tool for the 65nm node lithography;Irie;Proc. SPIE,2005

4. International Technoloty Roadmap for Semiconductors 〈http://www.itrs.net/〉.

5. EUV lithography development in Europe: present status and perspectives;Ceccotti;Proc. SPIE,2007

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2. Design and Analysis of Inverse Polarization Grating Devices for Deep Ultraviolet Light;Chinese Journal of Lasers;2020

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