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Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications

  • Published:2021-04 Issue: Volume:231 Page:166425
  • ISSN:0030-4026
  • Container-title:Optik
  • language:en
  • Short-container-title:Optik

Author:

Khan M. Junaid IqbalORCID,Kanwal Zarfishan,Latif Abid,Ahmad JavedORCID,Akhtar Perveen,Yousaf Masood,Ullah Hamid

Funder

Lahore University of Management Sciences

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference71 articles.

1. Insulated gate and surface passivation structures for GaN-based power transistors;Yatabe;J. Phys. D Appl. Phys.,2016

2. Enhancement of light extraction from light emitting diodes;Zhmakin;Phys. Rep.,2011

3. GaN based transistors for high power applications;Shur;Iee J. Solidstate Electron Devices,1998

4. Status and future of high-power light-emitting diodes for solid-state lighting;Krames;J. Disp. Technol.,2007

5. A visible light RGB wavelength demultiplexer based on silicon-nitride multicore PCF;Dadabayev;Opt. Laser Technol.,2019
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