Fully numerical analysis of III-nitride based quantum dot lasers considering the quantum dots size distribution

Author:

Navaeipour P.,Asgari A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. High quality factor nitride-based optical cavities: micro disks with embedded GaN/AlGaN quantum dots;Mexis;Opt. Lett.,2011

2. Dependence of exciton energy on dot size in GaN/AlN quantum dots;Williams;Phys. Rev. B,2006

3. GaN-based blue laser diodes grown on SiC substrate as light source of high density optical data storage;Kurmata;FUJITSU Sci. Tech. J.,1998

4. AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p–i–n heterostructures;Asgari;Microelectron. J.,2009

5. SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors;Asgari;Appl. Phys. Lett.,2012

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