The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization
Author:
Publisher
Elsevier BV
Subject
Electrochemistry
Reference29 articles.
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1. Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization;ADV NAT SCI-NANOSCI;2022
2. Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization;Advances in Natural Sciences: Nanoscience and Nanotechnology;2022-09-01
3. Improvement of a capacitive UV-sensor by porous silicon powders embedded in epoxy on porous silicon film;Optical Materials Express;2022-07-20
4. Characterization of porous silicon thin films passivated by a nano-silver layer;Materials Science in Semiconductor Processing;2015-03
5. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential;Physica B: Condensed Matter;2014-11
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