Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry

Author:

Deng Hui,Hosoya Kenji,Imanishi Yusuke,Endo Katsuyoshi,Yamamura Kazuya

Funder

MEXT, Japan

JST

JSPS research fellow

Publisher

Elsevier BV

Subject

Electrochemistry

Reference17 articles.

1. Chemomechanical polishing of silicon carbide;Zhou;J. Electrochem. Soc.,1997

2. Atomic -scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst;Arima;Appl. Phys. Lett.,2007

3. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface;Yamamura;Ann. ICRP,2011

4. Atomic-scale flattening mechanism of 4H-SiC (0001) in plasma assisted polishing;Deng;Ann. ICRP,2013

5. Mechanochemical polishing of silicon carbide crystal with chromium (III) oxide abrasive;Kikuchi;J. Am. Ceram. Soc.,1992

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