Direct observation of the diffusion behavior of an electrodeposition additive in through-silicon via using in situ surface enhanced Raman spectroscopy-Reference-Cited by-同舟云学术

Direct observation of the diffusion behavior of an electrodeposition additive in through-silicon via using in situ surface enhanced Raman spectroscopy

Published:2018-03 Issue: Volume:88 Page:34-38
ISSN:1388-2481
Container-title:Electrochemistry Communications
language:en
Short-container-title:Electrochemistry Communications

Author:

Homma Takayuki,Kato Akira,Kunimoto Masahiro,Yanagisawa Masahiro

Funder

Japan Science and Technology Corporation

Publisher

Elsevier BV

Subject

Electrochemistry

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3. An overview of through-silicon-via technology and manufacturing challenges;Gambino;Microelectron. Eng.,2015

4. Extreme bottom-up superfilling of through-silicon-vias by damascene processing: suppressor disruption, positive feedback and Turing patterns;Moffat;J. Electrochem. Soc.,2012

5. The influences of iodide ion on Cu electrodeposition and TSV filling;Kim;J. Electrochem. Soc.,2016

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