Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements-Reference-Cited by-同舟云学术

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Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

Published:2020-07 Issue: Volume:134 Page:102864
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Sobczak K.,Borysiuk J.,Strąk P.,Jakieła R.,Koroński K.,Kaminska A.,Monroy E.,Krukowski S.

Funder

European Union

European Regional Development Fund

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference25 articles.

1. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI);Amano;Jpn. J. Appl. Phys.,1989

2. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films;Angerer;Appl. Phys. Lett.,1997

3. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells;Ban;Appl. Phys. Express,2011

4. Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences;Bernardini;Phys. Status Solidi B,1999

5. Spontaneous polarization and piezoelectric constants of III-V nitrides;Bernardini;Phys. Rev. B,1997

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