Process Technology for Copper Interconnects-Reference-Cited by-同舟云学术

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Process Technology for Copper Interconnects

Published:2012 Issue: Volume: Page:221-269
ISSN:
Container-title:Handbook of Thin Film Deposition
language:
Short-container-title:

Author:

Gambino Jeffrey

Publisher

Elsevier

Reference202 articles.

1. Moore’s law: the future of Si microelectronics;Thompson;Mater. Today,2006

2. National Science and Engineering Council,

3. The future of CMOS technology;Isaac;IBM J. Res. Develop.,2000

4. MOS transistors: scaling and performance trends;Bohr;Semicond. Int.,1995

5. Design of ion-implanted MOSFET’s with very small physical dimensions;Dennard;IEEE J. Solid-State Circuits,1974

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1. On the Mechanism of the Atomic Layer Deposition of Cu Films on Silicon Oxide Surfaces: Activation Using Atomic Hydrogen and Three-Dimensional Growth;Chemistry of Materials;2023-03-03

2. Plasmonic Boundary Condition Optimization applied to Nanoscale IR Antenna Structure Simulations;2022 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI);2022-07-10

3. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics;Nanofluid Flow in Porous Media;2020-08-19

4. Electrochemical Anodization of 2-nm-Thick Tantalum Films for Self-Assembling of Molecularly Thick Layer as a Barrier for Copper;Journal of The Electrochemical Society;2020-07-17

5. Experimental realization of electromigration at high power for copper wires;Journal of Energy Systems;2019-12-31

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