Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors

Published:1988-09 Issue:9 Volume:31 Page:1375-1382
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Marty A.,Jamai J.,Vannel J.P.,Fabre N.,Bailbe J.P.,Duhamel N.,Dubon-Chevallier C.,Tasselli J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. Double heterojunction NpN GaAlAs/GaAs bipolar transistor

3. Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

4. Heterojunction GaAs/GaAlAs I2L-ring oscillators fabricated by MBE

5. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Integral Gummel Relation for Single and Double Heterojunction Graded-Base HBTs;Physica Status Solidi (a);1995-02-16

2. A new charge-control model for single- and double-heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1992-06

3. A collector design study for GaAs/Ge/GaAs double heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-03

4. Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors;Journal of Applied Physics;1991-01-15

5. Double heterojunction GaAlAs/GaAs I2L integrated circuits;Electronics Letters;1990

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