C-V characteristics of ion implanted depletion IGFETs and buried channel CCDs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Proc. Int. Conf. Properties and Uses of MIS Structures;Aubuchon,1969
2. THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION
3. Ion implantation for threshold control in COSMOS circuits
4. Depletion-mode IGFET made by deep ion implantation
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1. Formation Mechanism of Supposed Negative Fixed Charges in Glass;Journal of The Electrochemical Society;1994-11-01
2. Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC;IEEE Transactions on Electron Devices;1994-07
3. Direct capacitance measurements of small geometry MOS transistors;Microelectronics Journal;1991-11
4. Capacitance‐voltage studies of InP metal‐oxide‐semiconductor devices irradiated with4He+ions;Journal of Applied Physics;1989-11
5. A new method for the determination of channel depth and doping profile in buried-channel MOS transistors;Solid-State Electronics;1988-08
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