Direct capacitance measurements of small geometry MOS transistors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
1. A scaleable technique for the measurement of intrinsic MOS capacitance with Atto-Farad resolution;Iwai;IEEE Trans. Electron Devices,1985
2. Measurement of minimum-geometry MOS transistor capacitances;Paulos;IEEE Trans. Electron Devices,1985
3. A direct measurement technique for small geometry MOS transistor capacitances;Weng;IEEE Trans. Electron Devices,1985
4. Novel hot electron effects in the channel of MOSFET's observed by capacitance measurements;Schmitt-Landsiedel;IEEE Trans. Electron Devices,1985
5. Characteristics of the metal-oxide semiconductor transistors;Sah;IEEE Trans. Electron Devices,1985
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1. Use of test structures for characterization and modeling of inter- and intra-layer capacitances in a CMOS process;IEEE Transactions on Semiconductor Manufacturing;1997-05
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