Complementary MOS transistors-Reference-Cited by-同舟云学术

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Complementary MOS transistors

Published:1966-10 Issue:10 Volume:9 Page:991-1008
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

White M.H.,Cricchi J.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. International Solid-State Circuits Conference;Wanlass,1963

2. International Solid-State Circuits Conference;Mitchell,1965

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction;Microelectronics Reliability;2015-02

2. Revisiting MOSFET threshold voltage extraction methods;Microelectronics Reliability;2013-01

3. References;Thin Films by Chemical Vapour Deposition;1990

4. Physics and Modeling of Submicron Insulated-Gate Field-Effect Transistors. I;VLSI Electronics Microstructure Science;1981

5. Sixty Years of Electronics;Advances in Electronics and Electron Physics Volume 50;1980

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