Effect of deep impurity levels on Schottky barrier diode characteristics-Reference-Cited by-同舟云学术

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Effect of deep impurity levels on Schottky barrier diode characteristics

Published:1975-05 Issue:5 Volume:18 Page:375-379
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Korol A.N.,Kitsai M.Ye.,Strikha V.I.,Sheka D.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers

2. Deep level impurity effects on the frequency dependence of Schottky barrier capacitance

3. On the frequency dependence of GaAs Schottky barrier capacitances

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal-Semiconductor Schottky-Barrier Diodes;Semiconductor Devices and Integrated Electronics;1980

2. Effect of the interface on radiation defect formation in gallium arsenide;Radiation Effects;1979-01

3. Temperature anomalies of Schottky‐barrier diodes onn‐type silicon;Journal of Applied Physics;1977-10

4. Schottky Diodes;Semiconducting Devices;1976

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