Low current base-collector boundary conditions in GHz frequency transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Conditions at a p-n junction in the presence of collected current
2. Effects of modified collector boundary conditions on the basic properties of a transistor
3. Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects
4. Current gain and cutoff frequency falloff at high currents
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1. A study of the effects of the base doping profile on SiGe heterojunction bipolar transistor performance for all levels of injection;Semiconductor Science and Technology;2006-03-02
2. Application of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
3. Early voltage in heterojunction bipolar transistors: Quantum tunneling and base recombination effects;Solid-State Electronics;1995-12
4. Modeling two-dimensional effects on base and collector currents in narrow-emitter self-aligned bipolar transistors;Solid-State Electronics;1993-03
5. Two-dimensional modeling of current gain in downscaled bipolar transistors;Solid-State Electronics;1992-08
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