Conditions at a p-n junction in the presence of collected current
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. A Modification of the Theory of the Variation of Junction Transistor Current Gain with Operating Point and Frequency†
3. A theory of transistor cutoff frequency (fT) falloff at high current densities
4. Effects of modified collector boundary conditions on the basic properties of a transistor
5. Space-Charge Limited Emission in Semiconductors
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1. One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing;IEEE Transactions on Electron Devices;1990
2. Electron-velocity saturation at a BJT collector junction under low-level conditions;IEEE Transactions on Electron Devices;1983-03
3. Modeling the space‐charge‐layer boundary of a forward‐biased junction;Journal of Applied Physics;1982-07
4. Transistor noise theory in the Middlebrook limit of high injection;Solid-State Electronics;1980-11
5. Exact equivalent circuit model for steady-state characterization of semiconductor devices with multiple-energy-level recombination centers;IEEE Transactions on Electron Devices;1979-06
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