Spreading resistance correction factors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. A Spreading Resistance Technique for Resistivity Measurements on Silicon
Cited by 63 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spreading resistance modeling for rapid extraction of contact resistivity with a four-point probe;Solar Energy Materials and Solar Cells;2021-09
2. Surface conductivity of Si(100) and Ge(100) surfaces determined from four-point transport measurements using an analyticalN-layer conductance model;Physical Review B;2017-02-27
3. Measuring doping profiles of silicon detectors with a custom-designed probe station;Journal of Instrumentation;2012-11-13
4. Extraction of Layerwise Conductivities in Carbon-Enhanced, Multilayered LiFePO[sub 4] Cathodes;Journal of The Electrochemical Society;2005
5. Characterization of electrically active dopant profiles with the spreading resistance probe;Materials Science and Engineering: R: Reports;2004-12-31
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