InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma-Reference-Cited by-同舟云学术

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InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Published:1986-09 Issue:9 Volume:29 Page:933-940
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Oh Jae E.,Lamb Joel D.,Snyder Paul G.,Woollam John A.,Liu David C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Surface states and insulator traps at the Si3N4GaAs interface

2. Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide

3. Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

4. Oxidation of GaAs1 − x P x Surface by Oxygen Plasma and Properties of Oxide Film

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1. Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors;Solid-State Electronics;2007-01

2. Modelling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps.;MRS Proceedings;2005

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4. Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing;Journal of Applied Physics;2003-04

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