An experimental determination of the forward-biased emitter-base capacitance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Modeling of emitter capacitance
2. Transition region capacitance of diffused p-n junctions
3. J. Lindmayer and C.Y. Wrigley, Fundamentals of Semiconductor Devices, Chap. 5. Van Nostrand, New York
4. Transistor input parameter variations indicating high-gain frequency multiplication properties
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