Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Abstract

The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potentialVDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.