Studies of aluminum Schottky barrier gate annealing on GaAs FET structures-Reference-Cited by-同舟云学术

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Studies of aluminum Schottky barrier gate annealing on GaAs FET structures

Published:1978-04 Issue:4 Volume:21 Page:677-684
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sleger K.,Christou A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Proc. Ann. Rel. Phys. Conf.;Bellier,1975

2. Thermal aging of Al thin films on GaAs

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Aluminum Wet Etching on GaAs and Poly-DiMethylSiloxane Substrate: Surface Morphology and Topography Analysis;Materials Focus;2018-02-01

2. On the Richardson constant of intimate metal‐GaAs (111)BSchottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1993-11-15

3. Study of the Thermal Stability of the Schottky Contacts on GaInP Grown by LP-MOCVD;MRS Proceedings;1992

4. Metal Contact Degradation on III–V Compound Semiconductors;Semiconductor Device Reliability;1990

5. Stabilität und Zuverlässigkeit von GaAs-MESFET;GaAs-Feldeffekttransistoren;1989

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