Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants-Reference-Cited by-同舟云学术

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Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants

Published:1994-01 Issue:1 Volume:37 Page:9-15
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yokota Katsuhiro,Sakaguchi Masanori,Inohara Hiroki,Nakanishi Hiromi,Tamura Susumu,Horino Yuuji,Chayahara Akiyoshi,Satho Mamoru,Hirai Kiyohito,Takano Hiromichi,Kumagaya Mashao

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Formation ofp‐type GaAs layers using Mg+implantation and capless rapid thermal annealing

2. High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

3. Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

4. Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

5. Diffusion phenomena and defect generation in rapidly annealed GaAs

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