Experimental comparison of localized and free carrier Auger recombination in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Auger lifetimes for excitons bound to neutral donors and acceptors in Si
2. Auger transition rates for excitons bound to acceptors in Si and Ge
3. Optical Properties of Excitons Bound to Neutral Acceptors in GaP
4. Band-to-band auger recombination in indirect gap semiconductors
5. Auger coefficients for highly doped and highly excited silicon
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