Auger lifetimes for excitons bound to neutral donors and acceptors in Si
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Experimental Proof of the Existence of a New Electronic Complex in Silicon
2. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
3. Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon
4. Proc. XIIth Internat. Conf. Phys. of Semicond., Ed. Teubner, Stuttgart 1974 (p. 42).
5. New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
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