Moderate inversion model of ultrathin double-gate nMOS/SOI transistors-Reference-Cited by-同舟云学术

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Moderate inversion model of ultrathin double-gate nMOS/SOI transistors

Published:1995-01 Issue:1 Volume:38 Page:171-176
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Francis P.,Terao A.,Flandre D.,Van de Wiele F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Silicon-on-insulator 'gate-all-around device'

2. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

3. Proc. IEEE Int. SOI Conf.;Lawrence,1991

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