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D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors

  • Published:1995-01 Issue:1 Volume:38 Page:1-8
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Simoen E.,Claeys C.,Coenen S.,Decreton M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors;IEEE Transactions on Nuclear Science;2021-05

3. Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond;IEEE Transactions on Electron Devices;2018-03

4. Total ionizing dose effects in multiple-gate field-effect transistor;Semiconductor Science and Technology;2017-07-04

5. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
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