Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes-Reference-Cited by-同舟云学术

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Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes

Published:1993-07 Issue:7 Volume:36 Page:955-960
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Batra Shubneesh,Picone Kyle,Park Keun Hyung,Bhattacharya Suryanarayana,Banerjee Sanjay,Lee Jack,Manning Monte,Dennison Chuck

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A MOS Transistor with self-aligned polysilicon source—drain

2. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors

3. Analysis of Polysilicon Diffusion Sources

4. Lateral Uniformity of n+/p Junctions Formed by Arsenic Diffusion from Epitaxially Aligned Polycrystalline Silicon on Silicon

5. Diffusion of arsenic in polycrystalline silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The mechanism of secondary grain growth in polysilicon films;Journal of Crystal Growth;1997-01

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