An analytical threshold voltage model for SiGe-channel PMOS devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
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4. Experiments on Ge-GaAs heterojunctions
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1. Silicon Germanium Strained Layers and Heterostructures;Physica Scripta;2004-01-01
2. Design and fabrication of Si/SiGe PMOSFETs;Journal of Electronics (China);2002-01
3. Recent critical issues in Si/Si1−xGex/Si heterostructure FET devices;Solid-State Electronics;2001-11
4. Estimation of hole mobility in strained Si1−xGex buried channel heterostructure PMOSFET;Solid-State Electronics;2001-05
5. Analysis of retrograded double quantum well p-type MOSFET;Semiconductor Science and Technology;1998-09-01
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