Use of finite gate widths in multipoint correlation methods for DLTS characterization of semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Capacitance Transient Spectroscopy
3. A correlation method for semiconductor transient signal measurements
4. Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)
5. Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New approach to bias scan DLTS for rapid evaluation of interface states in MOS structures;Solid-State Electronics;1996-10
2. Temperature dependence of the capture cross section determined by DLTS on an MOS structure;Semiconductor Science and Technology;1995-11-01
3. Comparison of covariance linear predictive modeling to the modulation function method for use in deep level transient spectroscopy;Journal of Applied Physics;1994-05
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