Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics-Reference-Cited by-同舟云学术

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Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics

Published:1991-04 Issue:4 Volume:34 Page:385-388
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ting W.,Li P.C.,Lo G.Q.,Lee J.,Kwong D.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Time-dependent-dielectric breakdown of thin thermally grown SiO2films

2. Comparison between CVD and thermal oxide dielectric integrity

3. Rapid Thermal Annealed Low Pressure Chemical‐Vapor‐Deposited SiO2 as Gate Dielectric in Silicon MOSFET's

4. Advantages of thermal nitride and nitroxide gate films in VLSI process

5. Thermal nitridation of Si and SiO2for VLSI

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors;IEEE Transactions on Electron Devices;1992-07

2. Advances in processing and properties of perovskite thin-films for FRAMs, DRAMs, and decoupling capacitors;Integrated Ferroelectrics;1992-07

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