Depletion layer and capacitance calculations for Gaussian diffused junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Avalanche Breakdown Calculations for a Planar p-n Junction
2. Breakdown voltage of planar silicon junctions
3. Effect of junction curvature on breakdown voltage in semiconductors
4. Experimental study of the effect of junction curvature on breakdown voltage in Si
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2. Analytical solutions for avalanche-breakdown voltages of single-diffused gaussian junctions;Solid-State Electronics;1983-03
3. Peripheral emitter—Base junction capacitance in bipolar transistors;IEEE Transactions on Electron Devices;1979-05
4. An alternative to angle lap and stain analysis of Gaussian diffusions;IEEE Transactions on Electron Devices;1979-05
5. A New Method for Calculating Background Dopant Density from p‐n Junction Capacitance‐Voltage Measurements;Journal of The Electrochemical Society;1977-12-01
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