Numerical analysis of MOS magnetic field sensors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. A metal-oxide-semiconductor (MOS) Hall element;Gallagher;Solid-St. Electron.,1966
2. A silicon MOS magnetic field transducer of high sensitivity;Fry;IEEE Tran. Electron Devices,1969
3. MOS Hall device free from short-circuit effect;Popović;Sensors and Actuators,1984
4. Magnetic sensitivity of a MAGFET of uniform channel current density;Rao;Solid-St. Electron.,1971
5. Physics and Technology of Semiconductor Devices;Grove,1967
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