A mos hall device free from short-circuit effect
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
1. A Metal-Oxide-Semiconductor (MOS) Hall element
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4. Magnetic sensitivity of a MAGFET of uniform channel current density
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1. Study, design, microfabrication and characterization of a new CMOS compatible multi-terminal pressure sensor with enhanced sensitivity;Sensors and Actuators A: Physical;2011-01
2. CMOS multi-terminal pressure sensor with on-chip biasing circuit;2009 IEEE Sensors;2009-10
3. Hall effect sensors integrated in standard technology and optimized with on-chip circuitry;The European Physical Journal Applied Physics;2006-10
4. Horizontal hall effect sensor with high maximum absolute sensitivity;IEEE Sensors Journal;2003-12
5. Magnetic-sensitive field-effect and bipolar devices;Series in Sensors;2003-12
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