Magnetic and Electrical Properties of N-Channel MOS Hall-Effect Device-Reference-Cited by-同舟云学术

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Magnetic and Electrical Properties of N-Channel MOS Hall-Effect Device

Published:1976-04 Issue:4 Volume:15 Page:655-661
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yagi Atsuo,Sato Shuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/15/i=4/a=655/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic-sensitive field-effect and bipolar devices;Series in Sensors;2003-12

2. Three types of 2-D lateral magnetoresistive sensors with p+-implant confinement;IEE Proceedings - Circuits, Devices and Systems;2000

3. Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors;Journal of Applied Physics;1999-02

4. Micromachined hall elements for two-dimensional magnetic-field sensing;Sensors and Actuators A: Physical;1994-02

5. Integrated silicon magnetic-field sensors;Sensors and Actuators;1986-11

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