Analysis of sit I–V characteristics by two-dimensional simulation-Reference-Cited by-同舟云学术

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Analysis of sit I–V characteristics by two-dimensional simulation

Published:1987-05 Issue:5 Volume:30 Page:549-557
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yamamoto T.,Matsumoto K.,Yusa A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Proc. 7th Conf. Solid State Devices;Yamaguchi,1975

2. Two-dimensional Analysis of Vertical Junction Gate FET's

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