Two-dimensional Analysis of Vertical Junction Gate FET's
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/15/i=S1/a=163/pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Static-Induction Transistor;Complete Guide to Semiconductor Devices;2010-11-03
2. A Vertical Integration of GaAs/GaAlAs LED and Vertical FET with Embedded Schottky Electrodes;Japanese Journal of Applied Physics;1990-12-20
3. Analysis of sit I–V characteristics by two-dimensional simulation;Solid-State Electronics;1987-05
4. A new gate structure vertical-GaAs FET;IEEE Electron Device Letters;1985-06
5. Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo method;IEEE Transactions on Electron Devices;1984-04
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