Subthreshold behavior of silicon MOSFETs at 4.2 K
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET;Brews;IEEE Trans. Electron Dev.,1979
2. Very Small MOSFETs for low-temperature operation;Gaensslen;IEEE Trans. Electron Dev.,1977
3. A charge-sheet model of the MOSFET;Brews;Solid-St. Electron,1978
4. On the discrepancy between the absorption and photoconductivity measurements—in silicon inversion layers;Kamgar;Solid-St. Commun.,1977
5. Private communication from J.R. Brews
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