Raman scattering from ion-implanted carriers in n-GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Electrical properties of laser-annealed donor-implanted GaAs
2. A double‐layered encapsulant for annealing ion‐implanted GaAs up to 1100 °C
3. Laser‐induced recrystallization and damage in GaAs
4. Annealing of Te‐implanted GaAs by ruby laser irradiation
5. Anodic Oxidation of GaAs as a Technique to Evaluate Electrical Carrier Concentration Profiles
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Raman scattering from oval defects in GaAs epilayers;Applied Physics Letters;1993-07-26
2. Raman characterization of GaAs doped with Sn by laser assisted diffusion;Materials Science and Engineering: B;1993-06
3. Power dissipation in rf glow discharges;Vacuum;1991-01
4. Raman scattering study of carrier activation in zinc‐ and silicon‐implanted and pulse‐laser‐annealed GaAs;Journal of Applied Physics;1989-03-15
5. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
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