Derivation of noise in silicon inversion layers from carrier motion in a surface band-Reference-Cited by-同舟云学术

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Derivation of noise in silicon inversion layers from carrier motion in a surface band

Published:1968-06 Issue:6 Volume:11 Page:621-627
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Leventhal E.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Semiconductor Surface Physics;McWhorter,1957

2. Electrons and Holes in Semiconductors;Schockley,1950

3. Theory of noise in metal oxide semiconductor devices

4. Noise in Electron Devices;Talpey,1959

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1. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001

2. Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon;Russian Microelectronics;2000-07

3. Small-signal parameters and thermal noise of the four-terminal MOSFET in non-quasistatic operation;Solid-State Electronics;1990-05

4. Gate dielectric‐dependent flicker noise in metal‐oxide‐semiconductor transistors;Journal of Applied Physics;1990-01-15

5. Experimental apparatus for measuring noise in MOSFETs on silicon wafers;Review of Scientific Instruments;1988-06

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