Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates-Reference-Cited by-同舟云学术

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Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates

Published:1968-07 Issue:7 Volume:11 Page:653-660
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sarace J.C.,Kerwin R.E.,Klein D.L.,Edwards R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. International Electron Devices Meeting;Bower,1966

2. International Electron Devices Meeting;Schneer,1966

3. Solid State Device Research Conference;Nigh,1967

4. Chemical vapour deposition promoted by r.f. discharge

5. Electrochemical Society Spring Meeting;Balk,1965

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