Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperatures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. The preparation of high purity gallium arsenide by vapour phase epitaxial growth
2. Shallow donor levels and high mobility in epitaxial gallium arsenide
3. Electrical Properties of n-Type Epitaxial Gallium Arsenide
4. Preparation of high purity epitaxial gallium arsenide from the elements
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