Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation
2. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
3. Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers
4. Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers
5. Admittance spectroscopy of impurity levels in Schottky barriers
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