An improved model of “generation width” for pulsed MOS C-t transient analysis
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Experimental study of semiconductor surface conductivity
2. Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method
3. The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structures
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1. Direct Observation of Anomalous Positive Charge and Electron-Trapping Dynamics in High-$k$ Films Using Pulsed-MOS-Capacitor Measurements;IEEE Transactions on Electron Devices;2007-02
2. Bulk generation lifetime studies in semiconductor structures with nonuniform distribution of electrically active defects in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
3. The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates;Solid-State Electronics;1999-12
4. Measurement time reduction for generation lifetimes;IEEE Transactions on Electron Devices;1999-05
5. Improved formulae for determining bulk generation lifetime and surface generation velocity;Solid-State Electronics;1998-01
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