Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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2. Transient currents in pulsed metal–oxide–semiconductor tunnel diodes;Journal of Applied Physics;1998-07
3. Analysis, measurement, and simulation of dynamic write inhibit in an nvSRAM cell;IEEE Transactions on Electron Devices;1992-05
4. A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing;IEEE Electron Device Letters;1992-03
5. An improved model of “generation width” for pulsed MOS C-t transient analysis;Solid-State Electronics;1990-09
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