On the forward current-voltage characteristics of p+-n-n+ (n+-p-p+) epitaxial diodes-Reference-Cited by-同舟云学术

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On the forward current-voltage characteristics of p+-n-n+ (n+-p-p+) epitaxial diodes

Published:1980-06 Issue:6 Volume:23 Page:641-647
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wu Ching-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Record of 9th Photovoltaic Specialists Conf. 72CH0613-OED;Mandelkron,1972

2. Record of 10th Photovoltaic Specialists Conf. 73CH0801-ED;Mandelkron,1973

3. Computer analysis of back‐surface field silicon solar cells

4. Performance limitations of silicon solar cells

5. Conf. Abstracts Electron Meeting;Yagi,1974

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping profile of InP nanowires directly imaged by photoemission electron microscopy;Applied Physics Letters;2011-12-05

2. Discussion;Solid-State Electronics;1998-03

3. Electrical measurement of electron and hole mobilities as a function of injection level in silicon;IEEE Transactions on Electron Devices;1996

4. High-temperature characteristics of epitaxial high-low junction n+−n−p+ silicon diodes;Microelectronics Journal;1995-05

5. A high-low emitter bipolar power transistor;Microelectronics Journal;1995-01

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