A high-low emitter bipolar power transistor
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. Novel bipolar device with low emitter impurity concentration structure;Yagi,1974
2. Some aspects of LEC transistor behaviour;De Graaff;Solid-State Electron.,1976
3. An analytical model for the low-emitter impurity concentration transistor;Grung;Solid-State Electron.,1978
4. Base widening into the emitter region of an n+-npn bipolar transistor;Rey;Solid-State Electron.,1977
5. Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles;Wu;Solid-State Electron.,1980
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1. Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept;Microelectronic Engineering;2005-07
2. Realising high-current gain p-n-p transistors using a novel surface accumulation layer transistor (SALTran) concept;IEE Proceedings - Circuits, Devices and Systems;2005
3. High-temperature characteristics of epitaxial high-low junction n+−n−p+ silicon diodes;Microelectronics Journal;1995-05
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