Theory of the fully depleted SOS/MOS transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Frequency dependent propagation delay in silicon-on-sapphire digital integrated circuits
2. The effect of a floating substrate on the operation of silicon-on-sapphire transistors
3. Characterization of silicon-on-sapphire IGFET transistors
4. Elastoresistance of n‐type silicon on sapphire
5. A 2-µm silicon-gate C-MOS/SOS technology
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1. Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process;IEEE Journal of the Electron Devices Society;2021
2. General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET);Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14
3. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel;Chinese Physics B;2012-04
4. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs;Annual Review of Materials Research;2009-08-01
5. SOI CMOS Devices—Basic;CMOS VLSI Engineering;1998
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