Theoretical effects of surface diffused region lifetime models on silicon solar cells-Reference-Cited by-同舟云学术

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Theoretical effects of surface diffused region lifetime models on silicon solar cells

Published:1977-08 Issue:8 Volume:20 Page:697-701
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dunbar P.M.,Hauser J.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Int. Electron Dev. Meeting;Brandhorst,1975

2. Int. Electron Dev. Meeting;Fossum,1975

3. 11th Photovoltaic Spec. Conf.;Dunbar,1975

4. A study of efficiency in low resistivity silicon solar cells

5. Computer analysis of back‐surface field silicon solar cells

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1. Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment;Thin Solid Films;2006-02

2. Effect of surface recombination on the transit-time in heavily doped n+-p junction silicon solar cell;Solid-State Electronics;1995-06

3. Determination of solar cell diffusion capacitance and its dependence on temperature and 1 MeV electron fluence level;Solar Energy Materials and Solar Cells;1992-04

4. Reduction of f/sub t/ by nonuniform base bandgap narrowing;IEEE Electron Device Letters;1989-08

5. Recent advances in the physics of silicon P-N junction solar cells including their transient response;Progress in Quantum Electronics;1987-01

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