Tunneling of holes from acceptor levels in an applied field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Quantum‐mechanical estimates of the speed of field ionization of shallow impurity levels
2. New Charge-Storage Effect in Siliconp−i−nDiodes at Cryogenic Temperatures
3. Low‐temperature field ionization of localized impurity levels in semiconductors
4. J.R. Banavar, D.D. Coon, and G.E. Derkits, Jr., U.S. Patent No. 4, 167, 791 (1979)
5. Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodes
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