Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy-Reference-Cited by-同舟云学术

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Published:2019-12-02 Issue:1 Volume:7 Page:221-231
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Tarekegne Abebe T.¹,Kaltenecker Korbinian J.¹,Klarskov Pernille²,Iwaszczuk Krzysztof¹³,Lu Weifang¹,Ou Haiyan¹^ORCID,Norrman Kion⁴,Jepsen Peter U.¹^ORCID

Affiliation:

1. DTU Fotonik, Technical University of Denmark, Ørsteds Plads, Building 345, DK-2800 Kongens Lyngby, Denmark

2. Department of Engineering, Aarhus University, Finlandsgade 22, 8200 Aarhus N, Denmark

3. NKT Photonics, Blokken 84, DK-3460 Birkerød, Denmark

4. Center for Integrative Petroleum Research, King Fahd University of Petroleum and Minerals, KFUPM Box 5070, Dhahran 31261, Saudi Arabia

Funder

Danmarks Grundforskningsfond

Innovationsfonden

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b01462

Reference67 articles.

1. Silicon Carbide Microsystems for Harsh Environments

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

3. Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications

4. Monte Carlo simulation of 4H-SiC IMPATT diodes

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